By simultaneously controlling the morphology of GaN nanosized  pyramids, and the thickness and chemistry of an epitaxially deposited  InGaN layer, the intensity and frequency of the emitted light of the  device can be optimized. Moreover, by predicting optimal morphologies and correlating them to the processing operations that produce them, the nucleation of dislocations will be minimized, the conditions that favors the most thermodynamically stable phases will be  found. Finite element simulations are being used to find the optimal structures for white light LED application. The simulations will be carried out in conjunction with experimental collaborations.